Effect of transition metals on oxygen precipitation in silicon
نویسنده
چکیده
Effects of iron and copper impurities on the amount of precipitated oxygen and the oxide precipitate and stacking fault densities in Czochralski-grown silicon have been studied under varying thermal anneals. Silicon wafers were intentionally contaminated with iron or copper and subsequently subjected to different two-step heat treatments to induce oxygen precipitation. The iron contamination level was 2 × 10 cm and copper contamination level 6 × 10 cm. Experiments did not show that iron contamination would have any effect on the amount of precipitated oxygen or the defect densities. Copper contamination tests showed some indication of enhanced oxygen precipitation.
منابع مشابه
The simultaneous effect of 3d impurities of transition metals and oxygen vacancy defect on TiO2 anatase and rutile
In this work, the formation of oxygen-vacancy defect in 3d metals-doped TiO2 anatase and rutile structures is first investigated. The systematic calculations of formation energy, crystalline stability, band structure and density of state (DOS) of TiO2 samples of anatase and rutile doped with 3d transition metals with and without oxygen defect is done using FHI-aims as a software package based o...
متن کاملDevelopment of a Method for measuring Reactive Oxygen Radicals Levels In Vitro and Study the Effects of Vitamin C and E on Radical Production Reaction
Background: Free radicals and reactive oxygen species(ROS) are the most important factors in formation of oxidative stress reaction. Now, radical damage has been suggested to contribute to a wide variety of diseases such as Alzheimer, atherosclerosis and cancer. Transition metal ions in the presence of the various biomolecules produce these active compounds. The aim of this study is introducing...
متن کاملDirect Growth of Graphene Film on Germanium Substrate
Graphene has been predicted to play a role in post-silicon electronics due to the extraordinary carrier mobility. Chemical vapor deposition of graphene on transition metals has been considered as a major step towards commercial realization of graphene. However, fabrication based on transition metals involves an inevitable transfer step which can be as complicated as the deposition of graphene i...
متن کاملFilling the voids in silicon single crystals by precipitation of Cu3Si
This article presents a method to decorate all open volume defects in a silicon single crystal by Cu3Si precipitation. Si single crystals are being used for the determination of Avogadro’s number with sufficient accuracy (1 part in 10) to allow the establishment of a physical standard for the kilogram. The method described here can be used to certify that the open volume in such crystals is suf...
متن کاملThe Effect of Transition Metals Incorporation on the Structural and Magnetic Properties of Magnesium Oxide Nanoparticles
Pure and doped magnesium oxide nanoparticles were successfully synthesized employing a sol-gel process. The synthesized nanoparticles were characterized by thermal differential analysis, X-ray powder diffraction, transmission electron microscopy, scanning electron microscope, energy-dispersive X-ray spectroscopy, and vibrating sample magnetometer. X-ray diffraction patterns confirmed the crysta...
متن کامل